liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Oxidation Studies of Non-Polar 4H-SiC Surfaces
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, Trans Tech Publications Inc., 2004, 1321-1324 p.Conference paper, Published paper (Refereed)
Abstract [en]

The results of a photoemission study of clean and oxidized non-polar (1010) and (1120) surfaces of 4H-SiC crystals are reported. The effects induced in the core levels and valence bands upon initial oxidation were investigated. The surfaces were oxidized gradually from 1 L to 10(6) L while keeping the substrate at a temperature of 800degreesC. Recorded Si 2p spectra show three oxidation states for both surfaces and these are interpreted to originate from Si+1, Si+2 and Si+4, respectively. This is quite different compared to earlier results for the polar surfaces where only Si+4 and one sub-oxide were revealed on each surface. It is concluded that the Si+4 oxide (SiO2) grow as a layer on top of the Si+1 and Si+2 sub-oxides that are located at the interface. The surface/interface related carbon is found to decrease dramatically, but not to be totally eliminated, after the large oxygen exposures made

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. 1321-1324 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vols. 457-460
Keyword [en]
silicon carbide; oxidation; non-polar; photoemission
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-24586DOI: 10.4028/www.scientific.net/MSF.457-460.1321ISI: 000222802200314Local ID: 6760OAI: oai:DiVA.org:liu-24586DiVA: diva2:244908
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, France, OCT 05-10, 2003
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2012-08-27Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Virojanadara, ChariyaJohansson, Leif

Search in DiVA

By author/editor
Virojanadara, ChariyaJohansson, Leif
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 27 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf