Deformation potentials of the E1 (TO) and E2 modes of InN
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, no 18, 3636-3638 p.Article in journal (Refereed) Published
The determination of deformation potentials of E1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E1(TO) mode was 477.9 cm-1 and 491.9 cm -1 for the E2 modes.
Place, publisher, year, edition, pages
2004. Vol. 84, no 18, 3636-3638 p.
IdentifiersURN: urn:nbn:se:liu:diva-24591DOI: 10.1063/1.1738520Local ID: 6767OAI: oai:DiVA.org:liu-24591DiVA: diva2:244913