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Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 25, 5071-5073 p.Article in journal (Refereed) Published
Abstract [en]

The Si-doped GaN/Al0.07Ga0.93N multiple quantum wells (MQW) were investigated, using photoluminescence (PL) and time-resolved (PL) measurements. The influence of Si doping on the emission energy and recombination dynamics of the MWQs were also investigated, with different dopant position in the wells. It was observed that the redshifted emission of the MQWs was attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions. It was also observed that the PL decay time of the sample was ∼760 ps, at low temperature.

Place, publisher, year, edition, pages
2004. Vol. 84, no 25, 5071-5073 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-24592DOI: 10.1063/1.1763976Local ID: 6768OAI: oai:DiVA.org:liu-24592DiVA: diva2:244914
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-12-13

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Harati Zadeh, HamidMonemar, BoPaskov, PlamenBergman, PederSernelius, BoHoltz, Per-Olof

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Harati Zadeh, HamidMonemar, BoPaskov, PlamenBergman, PederSernelius, BoHoltz, Per-Olof
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