InN dielectric function from the midinfrared to the ultraviolet range
2004 (English)Article in journal (Refereed) Published
We present a comprehensive study of the InN dielectric function from the midinfrared range up to 6.5 eV employing spectroscopic ellipsometry at room temperature. The single-crystalline InN films with Hall concentrations varying between 7.7 × 1017 and 1.4 × 1019 cm -3 were grown by molecular-beam epitaxy on sapphire substrates and show high structural quality. Free-carrier and phonon properties are determined precisely. The onset of the absorption edge reveals a distinct blueshift with increasing free-electron concentration, from 0.65 eV for the highest resistive material up to 0.80 eV. In the ultraviolet region, electronic interband transitions are detected at 4.84, 5.41, 5.59, and 6.10 eV, the second being the dominating one, and tentatively assigned in the Brillouin zone.
Place, publisher, year, edition, pages
2004. Vol. 70, no 11
IdentifiersURN: urn:nbn:se:liu:diva-24599DOI: 10.1103/PhysRevB.70.115217Local ID: 6775OAI: oai:DiVA.org:liu-24599DiVA: diva2:244921