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Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
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2004 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 241, no 7Article in journal (Refereed) Published
Abstract [en]

Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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2004. Vol. 241, no 7
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Natural Sciences
URN: urn:nbn:se:liu:diva-24600DOI: 10.1002/pssb.200409040Local ID: 6776OAI: diva2:244922
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2011-01-12

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Paskova, Tanja
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Department of Physics, Chemistry and Biology
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