Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 (English)Article in journal (Refereed) Published
The deviations on the band-gap of InN which were linked to the precipitation of indium in the metallic phase that leads to additional optical losses associated with Mie resonances were discussed. The two sets of InP epilayers were examined by both plasma-assisted molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) on sapphire. The Mie resonance for InN layers were important because of the activation in the In aggregation phenomena in the alloys. The results show that bright infrared emission arises in a close vicinity of In inclusions and was likely associated with surface states at the metal/InN interfaces.
Place, publisher, year, edition, pages
2004. Vol. 92, no 11
IdentifiersURN: urn:nbn:se:liu:diva-24605DOI: 10.1103/PhysRevLett.92.117407Local ID: 6781OAI: oai:DiVA.org:liu-24605DiVA: diva2:244927