Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 85, no 5, 754-756 p.Article in journal (Refereed) Published
The effect of infrared laser on charge state and emission intensity of the InAs/GaAs quantum dots (QDs)was analyzed. It was observed that the excitonic photoluminescence spectra of the QDs were redistributed in favor of the neutral excitation. It was also observed that photoluminescence intensity from the QDs increased by more than a factor of 5. The results showed that the emission intensity from the QDs can be effectively enhanced by optical means.
Place, publisher, year, edition, pages
2004. Vol. 85, no 5, 754-756 p.
IdentifiersURN: urn:nbn:se:liu:diva-24607DOI: 10.1063/1.1773374Local ID: 6783OAI: oai:DiVA.org:liu-24607DiVA: diva2:244929