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Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-4547-6673
Linköping University, Department of Physics, Chemistry and Biology.
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 5, 754-756 p.Article in journal (Refereed) Published
Abstract [en]

The effect of infrared laser on charge state and emission intensity of the InAs/GaAs quantum dots (QDs)was analyzed. It was observed that the excitonic photoluminescence spectra of the QDs were redistributed in favor of the neutral excitation. It was also observed that photoluminescence intensity from the QDs increased by more than a factor of 5. The results showed that the emission intensity from the QDs can be effectively enhanced by optical means.

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2004. Vol. 85, no 5, 754-756 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-24607DOI: 10.1063/1.1773374Local ID: 6783OAI: oai:DiVA.org:liu-24607DiVA: diva2:244929
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-12-13

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Karlsson, FredrikHoltz, Per-OlofMonemar, Bo

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