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Thin film growth and characterization of Ti-(Si,Ge)-C compounds
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
2005 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis describes growth by de magnetron sputtering of thin film Ti-Si-C and Ti-Ge-C materials, with an emphasis on the deposition conditions for nanocomposite and epitaxial growth at low and high temperature processing, respectively. In the Ti-Si-C materials system, I have synthesized nanocomposite thin films from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at low substrate temperature (300 oC and below). The films consisted ofnanocrystalline (nc-) TiC and amorphous (a-) SiC, with possible presence of a small amount of non-carbidic C. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 GPa and 290 GPa, respectively. The electrical resistivity was 330 μΩcm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material, exhibiting contact resistances against Ag as low as 6μΩ at a contact force of 800 N compared to 3.2 μΩ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive gas test, with no N, Cl, or S contaminants entering the bulk of the films. Furthermore, the thesis describes epitaxial growth on Al2O3(0001) substrates of single- crystal thin films of the Mn+1AXn phases Ti2GeC and Ti3GeC2, and a new phase Ti4GeC3 as well as two new intergrown MAX structures, Ti5Ge2C3 and Ti7Ge2C5. X-ray diffraction shows that Ti-Ge-C MAX-phases require somewhat higher deposition temperatures (1000 oC) in a narrower window than their Ti-Si-C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young's modulus of 300 GPa, lower than that of Ti3SiC2, 320 GPa. Four point probe measurements yield resistivity values of 50-200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet , 2005. , 62 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1164
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-28394ISRN: LiU-TEK-LIC-2005:19Local ID: 13530ISBN: 91-8529-951-0 (print)OAI: oai:DiVA.org:liu-28394DiVA: diva2:249200
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-01-13
List of papers
1. Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
Open this publication in new window or tab >>Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
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2005 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, Vol. 23, no 6, 2486-2495 p.Article in journal (Refereed) Published
Abstract [en]

We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300  °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290  GPa, respectively. The electrical resistivity was 330  µ  cm for optimal Ar pressure (4  mTorr) and substrate temperature (300  °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6  µ at a contact force of 800  N compared to 3.2  µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.

Keyword
titanium compounds, silicon compounds, wide band gap semiconductors, nanocomposites, amorphous semiconductors, thin films, sputter deposition, electron microscopy, X-ray diffraction, X-ray photoelectron spectra, surface morphology, ductility, indentation, hardness, electrical resistivity, electrical contacts, contact resistance
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-14473 (URN)10.1116/1.2131081 (DOI)
Available from: 2007-05-14 Created: 2007-05-14 Last updated: 2016-08-31
2. Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
Open this publication in new window or tab >>Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
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2005 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 20, no 4, 779-782 p.Article in journal (Refereed) Published
Abstract [en]

We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young’s modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-28436 (URN)10.1557/JMR.2005.0105 (DOI)13576 (Local ID)13576 (Archive number)13576 (OAI)
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2016-08-31

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