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Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0003-1785-0864
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2005 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 20, no 4, 779-782 p.Article in journal (Refereed) Published
Abstract [en]

We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young’s modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.

Place, publisher, year, edition, pages
2005. Vol. 20, no 4, 779-782 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-28436DOI: 10.1557/JMR.2005.0105Local ID: 13576OAI: oai:DiVA.org:liu-28436DiVA: diva2:249244
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2016-08-31
In thesis
1. Thin film growth and characterization of Ti-(Si,Ge)-C compounds
Open this publication in new window or tab >>Thin film growth and characterization of Ti-(Si,Ge)-C compounds
2005 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis describes growth by de magnetron sputtering of thin film Ti-Si-C and Ti-Ge-C materials, with an emphasis on the deposition conditions for nanocomposite and epitaxial growth at low and high temperature processing, respectively. In the Ti-Si-C materials system, I have synthesized nanocomposite thin films from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at low substrate temperature (300 oC and below). The films consisted ofnanocrystalline (nc-) TiC and amorphous (a-) SiC, with possible presence of a small amount of non-carbidic C. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 GPa and 290 GPa, respectively. The electrical resistivity was 330 μΩcm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material, exhibiting contact resistances against Ag as low as 6μΩ at a contact force of 800 N compared to 3.2 μΩ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive gas test, with no N, Cl, or S contaminants entering the bulk of the films. Furthermore, the thesis describes epitaxial growth on Al2O3(0001) substrates of single- crystal thin films of the Mn+1AXn phases Ti2GeC and Ti3GeC2, and a new phase Ti4GeC3 as well as two new intergrown MAX structures, Ti5Ge2C3 and Ti7Ge2C5. X-ray diffraction shows that Ti-Ge-C MAX-phases require somewhat higher deposition temperatures (1000 oC) in a narrower window than their Ti-Si-C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young's modulus of 300 GPa, lower than that of Ti3SiC2, 320 GPa. Four point probe measurements yield resistivity values of 50-200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.

Place, publisher, year, edition, pages
Linköping: Linköpings universitet, 2005. 62 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1164
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-28394 (URN)LiU-TEK-LIC-2005:19 (ISRN)13530 (Local ID)91-8529-951-0 (ISBN)13530 (Archive number)13530 (OAI)
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-01-13

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Högberg, HansEklund, PerEmmerlich, JensBirch, JensHultman, Lars

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