Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
2005 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 20, no 4, 779-782 p.Article in journal (Refereed) Published
We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young’s modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.
Place, publisher, year, edition, pages
2005. Vol. 20, no 4, 779-782 p.
IdentifiersURN: urn:nbn:se:liu:diva-28436DOI: 10.1557/JMR.2005.0105Local ID: 13576OAI: oai:DiVA.org:liu-28436DiVA: diva2:249244