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The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 5, 2397-2402 p.Article in journal (Refereed) Published
Abstract [en]

The influence of germanium and carbon on the phase formation, strain relaxation and the occurrence of agglomeration of the Si1-x-yGe xCy epitaxial layers in Ni/SiGe(C) system were investigated. The defects formed by the reaction of Ni on SiGe(C) layers were investigated using cross-sectional transmission electron microscopy (XTEM). It was observed that NisiGe layers were crystalline and with strong growth orientation in the direction, but the thermal stability was decreased with increasing Ge amount due to agglomeration. It was also observed that at the interface of NiSiGe/SiGeC carbon was accumulated at low-temperature annealing which retarded the phase transformation and agglomeration of Ni/SiGeC systems.

Place, publisher, year, edition, pages
2004. Vol. 95, no 5, 2397-2402 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30065DOI: 10.1063/1.1645996Local ID: 15526OAI: oai:DiVA.org:liu-30065DiVA: diva2:250886
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Persson, PerHultman, Lars

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