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Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications
Dept of Semiconductor Science and Technology Chonbuk National University.
Dept of Semiconductor Science and Technology Chonbuk National University.
Nano Mechantronic Research Center Korea Eletronics Technology Inst..
Nano Mechantronic Research Center Korea Electronics Technology Inst..
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2005 (English)In: Solid-State Electronics, ISSN 0038-1101, Vol. 49, 1297-1301 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2005. Vol. 49, 1297-1301 p.
Keyword [en]
Silicon carbide, LTLM structures, Gas sensor, ohmic contacts
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30144DOI: 10.1016/j.sse.2005.06.005Local ID: 15625OAI: oai:DiVA.org:liu-30144DiVA: diva2:250965
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2014-01-09

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Unéus, LarsLloyd-Spets, Anita

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