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Influence of gate bias of MISiC-FET gas sensor device on the sensing properties
School of Science and Engineering Ishinomaki Senshu University.
School of Science and Engineering Ishinomaki Senshu University.
School of Science and Engineering Ishinomaki Senshu University.
Acreo AB.
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2005 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 108, 501-507 p.Article in journal (Refereed) Published
Abstract [en]

The influence of gate bias on the gas sensing properties of SiC-based field effect transistors with catalytic gate and a buried short channel has been studied. The drain current-voltage (I-d-V-D) characteristics of the device reveal non-saturation property, which is a consequence of the short channel design. The drain current is larger in hydrogen ambient than in oxygen ambient at the same drain voltage. The threshold voltage decreases with increasing positive gate bias, and increases with increasing negative gate bias. When a positive bias is applied to the gate, the I-d-V-D characteristics reveal a tendency to saturate. A positive gate bias increases the drain voltage response to hydrogen, as compared with a negative applied gate bias. However, a positive gate bias decreases the stability of the device signal. A change in the channel resistivity is the main reason for the change in the electrical properties when a positive gate bias is applied. A physical model that explains the influence of the gate bias has been studied, and the behavior of the barrier height in the channel was estimated by using the temperature dependence of the I-d-V-D characteristics.

Place, publisher, year, edition, pages
2005. Vol. 108, 501-507 p.
Keyword [en]
current-voltage, JFET, MISiC-FET, gate bias, buried short channel
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-30147DOI: 10.1016/j.snb.2004.11.057Local ID: 15630OAI: diva2:250968
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2014-01-09

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Wingbrant, HelenaAndersson, MikeLundström, IngemarLloyd-Spets, Anita
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