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Direct experimental verification of shot noise in short channel MOS transistors
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
2005 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 41, no 15, 869-871 p.Article in journal (Refereed) Published
Abstract [en]

Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 urn process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al. © IEE 2005.

Place, publisher, year, edition, pages
2005. Vol. 41, no 15, 869-871 p.
Keyword [en]
experimental verification, shot noise, short channel MOS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-30148DOI: 10.1049/el:20051474Local ID: 15633OAI: oai:DiVA.org:liu-30148DiVA: diva2:250969
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Andersson, StefanSvensson, Christer

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