Direct experimental verification of shot noise in short channel MOS transistors
2005 (English)In: Electronics Letters, ISSN 0013-5194, Vol. 41, no 15, 869-871 p.Article in journal (Refereed) Published
Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 urn process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al. © IEE 2005.
Place, publisher, year, edition, pages
2005. Vol. 41, no 15, 869-871 p.
experimental verification, shot noise, short channel MOS
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-30148DOI: 10.1049/el:20051474Local ID: 15633OAI: oai:DiVA.org:liu-30148DiVA: diva2:250969