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Growth of highly curved Al1-xinxN nanocrystals
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2005 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 202, no 7Article in journal (Refereed) Published
Abstract [en]

A materials structure is reported that is characterized by high lattice curvature assigned to a compositional gradient. The phenomenon occurs for physical vapour deposition of Al1-xInxN epitaxial thin films with directional fluxes of Al and In at kinetically limited growth conditions. According to our growth model unit cells are incorporated on the growth surfaces of emerging whiskers (nanowires) with a continuously varying lattice parameter depending on their position with respect to Al- and In-rich sides of the whisker. Such curved crystals are effectively quenched solid solutions. We present a description of this generic, self-assembled curved crystal structure and its implications. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2005. Vol. 202, no 7
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-30460DOI: 10.1002/pssa.200510024Local ID: 16031OAI: oai:DiVA.org:liu-30460DiVA: diva2:251282
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-05-11

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Seppänen, TimoHultman, LarsBirch, Jens

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