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Activation of shallow boron acceptor in CB coimplanted silicon carbide: A theoretical study
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 10, 102108- p.Article in journal (Refereed) Published
Abstract [en]

Ab initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron interstitial is energetically favored in silicon carbide. These bistable boron defects possess deep, negative- U occupation levels in the band gap. The theoretical results can explain the observed activation rates in carbon-boron coimplantation experiments. © 2005 American Institute of Physics.

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2005. Vol. 86, no 10, 102108- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30683DOI: 10.1063/1.1883745Local ID: 16288OAI: oai:DiVA.org:liu-30683DiVA: diva2:251506
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Nguyen, Son TienJanzén, Erik

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