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High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2005 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 44, 1181-1185 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2005. Vol. 44, 1181-1185 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30713Local ID: 16325OAI: oai:DiVA.org:liu-30713DiVA: diva2:251536
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Gogova, DanielaLarsson, HenrikYazdi, Gholam RezaIvanov, Ivan GueorguievYakimova, RositsaMonemar, Bo

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Gogova, DanielaLarsson, HenrikYazdi, Gholam RezaIvanov, Ivan GueorguievYakimova, RositsaMonemar, Bo
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Department of Physics, Chemistry and BiologyThe Institute of TechnologySemiconductor Materials
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