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Investigation of the structural and optical properties of free-standing GaN grown by HVPE
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2005 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 38, no 14, 2332-2337 p.Article in journal (Refereed) Published
Abstract [en]

The potential of the high-growth rate hydride vapour phase epitaxy technique and laser lift-off for the fabrication of free-standing GaN substrates is explored. Structural and optical properties of 300 νm thick free-standing GaN have been investigated employing different analytical techniques. The x-ray diffraction (XRD) measurements prove good crystalline quality of the material grown. A comparatively low value of (3 ± 1) × 1016 cm-3 of Ga vacancy-related defects is inferred from positron annihilation spectroscopy data. Complete strain relaxation is observed on the Ga-polar face of the free-standing GaN by XRD and Raman spectroscopy measurements. The strain-free homoepitaxy will significantly reduce the defect density, and thus an improvement of the device performance and lifetime can be realized. © 2005 IOP Publishing Ltd.

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2005. Vol. 38, no 14, 2332-2337 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30716DOI: 10.1088/0022-3727/38/14/007Local ID: 16328OAI: oai:DiVA.org:liu-30716DiVA: diva2:251539
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Hemmingsson, CarlMonemar, Bo

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