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Phonon mode behavior in strained wurtzite AlN/GaN superlattices
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2005 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 71, no 11, 115329- p.Article in journal (Refereed) Published
Abstract [en]

We have studied phonons in AlN/GaN superlattices with different periods but a constant well-to-barrier ratio using a combination of infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The strain evolution in the superlattice structures is assessed by high-resolution x-ray diffraction and reciprocal space mapping. We have identified E1(TO), A 1(LO) and E2 localized, and E1(LO) and A 1(TO) delocalized superlattice modes. The dependencies of their frequencies on in-plane strain are analyzed and discussed, and the strain-free frequencies of the superlattice modes are estimated. A good agreement between theory and experiment is found in the case of GaN localized modes, while large deviations between theoretically estimated and experimentally determined frequency shifts are observed for the AlN localized modes. The delocalization effect on the A1(TO) and E1(LO) phonons, as well as the free-carrier effect on the E1(LO) phonon are also discussed. ©2005 The American Physical Society.

Place, publisher, year, edition, pages
2005. Vol. 71, no 11, 115329- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30717DOI: 10.1103/PhysRevB.71.115329Local ID: 16329OAI: oai:DiVA.org:liu-30717DiVA: diva2:251540
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Darakchieva, VanyaPaskov, PlamenPaskova, TanjaMonemar, Bo

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