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Optical properties of InN - The bandgap question
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2005 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 38, no 1, 38-56 p.Article in journal (Refereed) Published
Abstract [en]

The bandgap value of InN was analyzed, with reference to optical data on single crystalline thin films samples grown on sapphire. It was found that the line shape of the photoluminescence spectra could be quite well reproduced in a model for the optical transitions from the conduction band states to localized states above the valence band. It was also found that the conduction band transition requires the presence of deep donor at a concentration close to 1020 cm∓3. The results show that the bandgap of pure InN should be about 0.69 eV at 2 K.

Place, publisher, year, edition, pages
2005. Vol. 38, no 1, 38-56 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30718DOI: 10.1016/j.spmi.2005.04.006Local ID: 16330OAI: oai:DiVA.org:liu-30718DiVA: diva2:251541
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Monemar, BoPaskov, Plamen

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