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Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 22, 222110- p.Article in journal (Refereed) Published
Abstract [en]

Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0-0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect. © 2005 American Institute of Physics.

Place, publisher, year, edition, pages
2005. Vol. 86, no 22, 222110- p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-30723DOI: 10.1063/1.1943487Local ID: 16336OAI: oai:DiVA.org:liu-30723DiVA: diva2:251546
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

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Vorona, IgorIzadifard, MortezaBuyanova, IrinaChen, Weimin

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Vorona, IgorIzadifard, MortezaBuyanova, IrinaChen, Weimin
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Functional Electronic MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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