Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 22, 222110- p.Article in journal (Refereed) Published
Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0-0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect. © 2005 American Institute of Physics.
Place, publisher, year, edition, pages
2005. Vol. 86, no 22, 222110- p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-30723DOI: 10.1063/1.1943487Local ID: 16336OAI: oai:DiVA.org:liu-30723DiVA: diva2:251546