Effects of rapid thermal annealing on optical properties of GaNxP1−x alloys grown by solid source molecular beam epitaxy
2005 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 20, no 5, 353-356 p.Article in journal (Refereed) Published
Temperature-dependent photoluminescence (PL), PL excitation and time-resolved PL measurements were employed to study the effects of rapid thermal annealing (RTA) on optical properties of GaNxP1−x alloys grown by solid source molecular beam epitaxy. A substantial increase in radiative efficiency of GaNP epilayers, which is especially pronounced for the high-energy PL component, was achieved after RTA and is attributed to annealing out of competing non-radiative centres. The latter is evident from reduced quenching of the PL intensity with increasing measurement temperature, which results in a strong increase (up to 18 times) in the PL intensity at room temperature (RT), as well as from a substantial increase in carrier lifetime at RT deduced from time-resolved PL measurements.
Place, publisher, year, edition, pages
2005. Vol. 20, no 5, 353-356 p.
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-30725DOI: 10.1088/0268-1242/20/5/005Local ID: 16338OAI: oai:DiVA.org:liu-30725DiVA: diva2:251548