Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 87, no 19, 192107- p.Article in journal (Refereed) Published
Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors. © 2005 American Institute of Physics.
Place, publisher, year, edition, pages
2005. Vol. 87, no 19, 192107- p.
IdentifiersURN: urn:nbn:se:liu:diva-30726DOI: 10.1063/1.2125125Local ID: 16339OAI: oai:DiVA.org:liu-30726DiVA: diva2:251549