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High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2005 (English)In: physica status solidi C, Vol. 2, 2005, Vol. 2, 2109-2112 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2005. Vol. 2, 2109-2112 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30729Local ID: 16342OAI: oai:DiVA.org:liu-30729DiVA: diva2:251552
Conference
Int. Workshop Nitride Semiconductors, 2004
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-03-09

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Hallin, ChristerKakanakova-Georgieva, AneliaPersson, PerJanzén, Erik

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Hallin, ChristerKakanakova-Georgieva, AneliaPersson, PerJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor MaterialsThin Film Physics
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