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The role of nitrogen in the annealing of vacancies in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483-485, 481-484 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2005. Vol. 483-485, 481-484 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30732Local ID: 16346OAI: oai:DiVA.org:liu-30732DiVA: diva2:251555
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ECSCRM2004
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2010-12-08

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Syväjärvi, MikaelYakimova, Rositsa

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Syväjärvi, MikaelYakimova, Rositsa
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Department of Physics, Chemistry and BiologyThe Institute of TechnologySemiconductor Materials
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