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Progress and limits of the numerical simulation of SiC bulk and epitaxial growth processes
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2005 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 483-485Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2005. Vol. 483-485
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Natural Sciences
URN: urn:nbn:se:liu:diva-30738Local ID: 16352OAI: diva2:251561
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2016-08-31

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Danielsson, Örjan
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Department of Physics, Chemistry and BiologyThe Institute of Technology
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