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Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negatice-U defects
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483-485, 519-522 p.Conference paper (Refereed)
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2005. Vol. 483-485, 519-522 p.
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Natural Sciences
URN: urn:nbn:se:liu:diva-30756Local ID: 16375OAI: diva2:251579
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2010-12-13

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Nguyen, Son TienJanzén, Erik
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The Institute of TechnologySemiconductor Materials
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