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Ga-interstitial related defects in Ga(Al)NP
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
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2005 (English)In: 27th Int. Conf. on the Physics of Semicond,2004, American Institute of Physics (AIP), 2005, 259-260 p.Conference paper, Published paper (Other academic)
Abstract [en]

Twogrown-in Ga interstitial (Gai) defects in Ga(Al)NP are identified byoptically detected magnetic resonance (ODMR), from the characteristic hyperfine (HF)structure associated with the nuclear spin I=3/2 of the Gai.Both defects are concluded to be Gai-related complexes. Effects ofAl and N compositions on the HF structure shed lighton local surrounding of the Gai. ©2005 American Institute ofPhysics

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2005. 259-260 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 772
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-30791DOI: 10.1063/1.1994091Local ID: 16417OAI: oai:DiVA.org:liu-30791DiVA: diva2:251614
Conference
27th International Conference on the Physics of Semiconductors - ICPS-27, 26-30 July 2004, Flagstaff, Arizona, USA
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-03-27

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Vorona, IgorBuyanova, IrinaChen, Weimin

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Vorona, IgorBuyanova, IrinaChen, Weimin
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