Defects in dilute nitrides
2005 (English)Conference paper (Refereed)
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As-Ga antisites and Ga-i self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
Place, publisher, year, edition, pages
2005. Vol. 108, 571-579 p.
, ACTA PHYSICA POLONICA A, 108
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-30795Local ID: 16422OAI: oai:DiVA.org:liu-30795DiVA: diva2:251618
34th International School on the Physics of Semiconducting Compounds
Invited talk at the 34th International School on the Physics of Semiconducting Compounds June 6-10 2005, Ustron-Jaszowiec, Poland