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Investigation of a GaMnN/GaN/InGaN structure for spinLED
Department of Physics, University of Florida, Gainesville, FL, USA.
Department of Physics, University of Florida, Gainesville, FL, USA.
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA.
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA.
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2005 (English)In: 27th Int. Conf. on the Physics of Semicond,2004 / [ed] José Menéndez, Chris G. Van de Walle, American Institute of Physics (AIP), 2005, 1319-1320 p.Conference paper, Published paper (Other academic)
Abstract [en]

Theoreticaland experimental studies of GaMnN/GaN/InGaN structure for a spin LEDdevice were performed. Strong electron spin relaxation was experimentally observedin a InGaN/GaN quantum well. It is shown that thestrong spin relaxation might result from the built-in piezoelectric fieldin strained wurzite heterostructures. A five level k · pmodel was used for microscopic calculations of the structure inversionasymmetry induced spin-orbit interaction. The magnitude of this interaction isshown to be comparable with that in InGaAs/GaAs quantum structures.©2005 American Institute of Physics

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2005. 1319-1320 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 772
Keyword [en]
spintronics
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-30796DOI: 10.1063/1.1994597ISI: 000230723900611Local ID: 16423ISBN: 0-7354-0257-4 (print)OAI: oai:DiVA.org:liu-30796DiVA: diva2:251619
Conference
27th Int. Conf. on the Physics of Semicond; Flagstaff, Arizona, USA; July 26-30, 2004
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-03-27

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Buyanova, IrinaBergman, J. P:Chen, Weimin

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CiteExportLink to record
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