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In2O3 particle films as gate material for MISiC-capacitor sensors
Växjö universitet.
Växjö universitet.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Physical Chemistry .ORCID iD: 0000-0002-5341-2637
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2005 (English)In: NOSA 2005,2005, 2005Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2005.
Keyword [en]
gate material, MISiC-capacitor, sensor
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Natural Sciences
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URN: urn:nbn:se:liu:diva-30829Local ID: 16476OAI: oai:DiVA.org:liu-30829DiVA: diva2:251652
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-03-09

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Salomonsson, AnetteOjamäe, LarsKäll, Per-OlovLloyd-Spets, Anita

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Salomonsson, AnetteOjamäe, LarsKäll, Per-OlovLloyd-Spets, Anita
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