Fast epitaxy by PVT of SiC in hydrogen atmosphere
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 275, no 1-2, e1103-e1107 p.Article in journal (Refereed) Published
Epitaxial growth in hydrogen atmosphere has been studied in relation to sublimation epitaxial growth. A new type of features with a hexagonal shape are observed in the layers grown in hydrogen atmosphere. The morphological details of the features have been studied with optical microscopy and atomic force microscopy. An interactive relation of the defect appearance with the step flow growth mode seems to be present. The results are compared with growth in vacuum, argon, and helium conditions. The possible influence of thermal component to a reactive one in hydrogen etching is discussed.
Place, publisher, year, edition, pages
2005. Vol. 275, no 1-2, e1103-e1107 p.
A1. Defects, A1. Nucleation, A3. Physical vapor deposition processes
National CategoryOther Basic Medicine
IdentifiersURN: urn:nbn:se:liu:diva-14802DOI: 10.1016/j.jcrysgro.2004.11.129OAI: oai:DiVA.org:liu-14802DiVA: diva2:25293