Growth and morphology of AlN crystals
2006 (English)In: Physica Scripta, ISSN 0031-8949, Vol. T126, 127-130 p.Article in journal (Refereed) Published
This study focused on growth dependencies, morphological forms and initial nucleation of aluminium nitride (AlN) crystals. Epitaxial layers of AlN have been grown on 4H-SiC substrates by sublimation recondensation in a radio frequency (RF) heated graphite furnace. Both AlN nuclei size and growth rate increased as temperature was increased and decreased as the pressure was increased. The results of these effects are different kinds of surface morphology. We have observed three modes of AlN single crystals: plate-like, columnar and needle-like. Optical microscopy and scanning electron microscopy (SEM) along with atomic force microscopy (AFM) were used to characterize the crystal surface morphology. Cathodoluminescence (CL) and x-ray diffraction (XRD) were applied to determine crystal quality and crystallographic orientation of the grown crystals.
Place, publisher, year, edition, pages
2006. Vol. T126, 127-130 p.
IdentifiersURN: urn:nbn:se:liu:diva-14803DOI: 10.1088/0031-8949/2006/T126/028OAI: oai:DiVA.org:liu-14803DiVA: diva2:25294