Aligned AlN nanowires and microrods by self-patterning
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 90, no 12, 123103- p.Article in journal (Refereed) Published
Self-patterned AlN microrods and nanowires were grown on 4H-SiC substrate by a physical vapor transport method. AlN hexagonal pyramids were found to be nucleation sites for the evolution of the observed morphological forms. The average diameter and length of the nanowires are about 200 nm and 90 µm, respectively. The density of microrods corresponds to the concentration of the pyramids, while the nanowires are less compact. Low-temperature cathodoluminescence spectra of microrods show band gap emission of AlN at 208 nm, which confirms that they are AlN single crystals. A formation mechanism of the AlN structures is suggested.
Place, publisher, year, edition, pages
2007. Vol. 90, no 12, 123103- p.
IdentifiersURN: urn:nbn:se:liu:diva-14805DOI: 10.1063/1.2715129OAI: oai:DiVA.org:liu-14805DiVA: diva2:25295