Employing discontinuous and continuous growth modes for preparation of AlN nanostructures on SiC substrates
2007 (English)In: ECSCRM 2006, Newcastle, UK: Materials Science Forum Vols. 556-557, Trans Tech Publications, Switzerland , 2007, Vol. 556-557, 1031-1034 p.Conference paper (Refereed)
In this report we present results on growth and characterization of AlN wires and thinfilms on SiC substrates. We have employed PVT technique in close space geometry for AlNdeposition on SiC off oriented substrates, most of which were prepared to have scratch-free smoothas-grown surface by SiC sublimation epitaxy. By manipulating the surface kinetics we have beenable to determine growth conditions yielding discontinuous or continuous morphologiescorresponding to nanowires and thin films, respectively. A particular feature of the latterexperiments is the fast temperature ramp up at the growth initiation. The AlN surface morphologywas characterized by optical, AFM and XRD tools, which showed good crystal quality independentof the growth mode.
Place, publisher, year, edition, pages
Trans Tech Publications, Switzerland , 2007. Vol. 556-557, 1031-1034 p.
AlN, Nanowires, Thin films, PVT, Structural
IdentifiersURN: urn:nbn:se:liu:diva-14808DOI: 10.4028/www.scientific.net/MSF.556-557.1031OAI: oai:DiVA.org:liu-14808DiVA: diva2:25299