Defect-free Single Crystal AlN Nanowires by Physical Vapor Transport Growth
(English)Manuscript (Other academic)
Growth by vapor-solid mechanism of AlN nanowires with a diameter in the range of 40-500nm and a length reaching 100 μm, resulting in a max aspect ratio of 600, is reported. Theobjects are obtained at 1750 oC and 850 mbar nitrogen pressure on 4H-SiC patternedsubstrates by sublimation epitaxy, which is a version of the physical vapor transport techniqueand provides a high growth rate. The nanowires are hexagonally shaped and perfectly alignedalong the 0001 direction with a small tilt given by the substrate vicinality. It is observed thatunder nitrogen excess a preferential growth along the c-axis of the wurtzite structure takesplace, and switches to lateral growth below some critical value of nitrogen pressure.Investigations by SEM, TEM, CL and Raman spectroscopy measurements were carried out. Itis shown that the nanowires consist of wurtzitic AlN with defect free crystal structure.Possible applications have been depicted.
IdentifiersURN: urn:nbn:se:liu:diva-14812OAI: oai:DiVA.org:liu-14812DiVA: diva2:25301