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Electronic structure and chemical bonding anisotropy investigation of wurtzite AlN
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-0317-0190
Universidad Complutense de Madrid.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 80, 155105- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure and the anisotropy of the Al - N p and s chemical bonding of wurtzite AlN has been investigated by bulk-sensitive total fluorescence yield absorption and soft x-ray emission spectroscopies. The measured N K, Al L1, and Al L2,3 x-ray emission and N 1s x-ray absorption spectra are compared with calculated spectra using first principles density-functional theory including dipole transition matrix elements. The main N 2p - Al 3p hybridization regions are identified at -1.0 to -1.8 eV and -5.0 to -5.5 eV below the top of the valence band. In addition, N 2s - Al 3p and N 2s - Al 3s hybridization regions are found at the bottom of the valence band around -13.5 eV and -15 eV, respectively. A strongly modified spectral shape of Al 3s states in the Al L2,3 emission from AlN in comparison to Al metal is found, which is also reflected in the N 2p - Al 3p hybridization observed in the Al L1 emission. The differences between the electronic structure and chemical bonding of AlN and Al metal are discussed in relation to the position of the hybridization regions and the valence band edge influencing the magnitude of the large band gap.

Place, publisher, year, edition, pages
2009. Vol. 80, 155105- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-33923DOI: 10.1103/PhysRevB.80.155105OAI: oai:DiVA.org:liu-33923DiVA: diva2:254745
Note

Original Publication: Martin Magnuson, M. Mattesini, Carina Höglund, Jens Birch and Lars Hultman, Electronic structure and chemical bonding anisotropy investigation of wurtzite AlN, 2009, Physical Review B. Condensed Matter and Materials Physics, (80), 155105. http://dx.doi.org/10.1103/PhysRevB.80.155105 Copyright: American Physical Society http://www.aps.org/

Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Magnuson, MartinHöglund, CarinaBirch, JensHultman, Lars

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