6 bit 1 GHz CMOS silicon-on-insulator flash analog-to-digital converter for read channel applications
2005 (English)In: Proc. European Conf. on Circuit Theory and Design, ECCTD'05, 2005, I/127-I/130 p.Conference paper (Refereed)
The purpose of this work is to investigate the possibility to implement analog base band circuitry along with digital circuitry in silicon-on-insulator technology. Hence a 6 bit Nyquist rate flash analog-to-digital converter is designed in a 130 nm CMOS silicon-on-insulator technology. The converter is aimed for read channel or ultra-wideband radio applications. The simulations indicate a 170 mW power consumption at a maximum sampling rate of 1 GHz. The supply voltage is only 1.2 V. The effective number of bit is 5.8 bit and the effective resolution bandwidth is 390 MHz. An energy per conversion step of 3.9 pJ indicate that this converter is as efficient as other state-of-the-art converters, without using interpolation or averaging techniques.
Place, publisher, year, edition, pages
2005. I/127-I/130 p.
CMOS integrated circuits, UHF integrated circuits, analog-digital conversion, integrated circuit design, silicon-on-insulator, ultra wideband communication
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-34481DOI: 10.1109/ECCTD.2005.1522926Local ID: 21521ISBN: 0-7803-9066-0OAI: oai:DiVA.org:liu-34481DiVA: diva2:255329