High carrier mobility in low band gap polymer-based field-effect transistors
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 25, 252105-1-252105-3 p.Article in journal (Refereed) Published
A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V−1 s−1.
Place, publisher, year, edition, pages
2005. Vol. 87, no 25, 252105-1-252105-3 p.
IdentifiersURN: urn:nbn:se:liu:diva-34581DOI: 10.1063/1.2142289Local ID: 22029OAI: oai:DiVA.org:liu-34581DiVA: diva2:255429