liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Statis random access memory with symmetric leakage-compensated bit line.
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
Intel Corp., USA.
Intel Corp., USA.
Intel Corp., USA.
Show others and affiliations
2004 (English)Patent (Other (popular science, discussion, etc.))
Place, publisher, year, edition, pages
2004.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-34871Local ID: 23757OAI: oai:DiVA.org:liu-34871DiVA: diva2:255719
Patent
U.S.Patent No.: 6,707,708 (2004-03-16)
Available from: 2009-10-10 Created: 2009-10-10

Open Access in DiVA

No full text

Authority records BETA

Alvandpour, Atila

Search in DiVA

By author/editor
Alvandpour, Atila
By organisation
The Institute of TechnologyElectronic Devices
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 68 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf