Optical properties of intrinsic and doped a-Si:H films grown by d.c. magnetron sputter deposition
2001 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 394, no 1-2, 255-262 p.Article in journal (Refereed) Published
Thin films of intrinsic, B- and P-doped a-Si:H were grown by d.c. magnetron sputter deposition. The doping was accomplished by doped targets and co-sputtering Si and B4C. Spectroscopic ellipsometry was used for optical characterization and multiple sample analysis was applied to extract the dielectric functions of intrinsic films with 8–10 at.% hydrogen content, boron doped films with 2.2 at.% hydrogen and phosphorous-doped films with hydrogen contents of 10–15 at.%. One of the phosphorous-doped films was micro-crystalline. Hydrogen content was determined by nuclear reaction analysis. From the obtained optical properties the absorption and the optical gap were studied addressing p–i–n diode applications. The optical gaps for intrinsic a-Si:H material were 1.88±0.03 eV as determined by Tauc analysis and 1.45±0.06 eV by applying Cody analysis.
Place, publisher, year, edition, pages
2001. Vol. 394, no 1-2, 255-262 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-34955DOI: 10.1016/S0040-6090(01)01179-8Local ID: 24287OAI: oai:DiVA.org:liu-34955DiVA: diva2:255803