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Investigation of RuO2/4H-SiC Schottky diode contacts by deep level transient spectroscopy
Slovak University of Technology.
Slovak University of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .ORCID iD: 0000-0002-1744-7322
University of Western Ontario.
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2006 (English)In: Chemical Physics Letters, ISSN 0009-2614, Vol. 429, no 4-6, 617-621 p.Article in journal (Refereed) Published
Abstract [en]

Schottky diodes were prepared on n-type silicon carbide (4H-SiC) substrates by deposition of ruthenium dioxide contacts. Their electrical and electronic properties were investigated by current-voltage (I-V) and capacitance-voltage (C-V) methods, and deep level transient spectroscopy (DLTS). Five deep energy levels with thermal activation energies of approximately 0.27, 0.45, 0.56, 0.58 and 0.85 eV referenced to the conduction band minimum were revealed. The two energy levels at 0.56 and 0.85 eV are presumably induced by divacancies and the incorporation of ruthenium impurities into the SiC interfacial region. The Schottky diode structures are typical with a barrier height of 0.88 eV, and the I-V characteristics signify a saturation current of 10 pA with an ideality factor of 1.28.

Place, publisher, year, edition, pages
2006. Vol. 429, no 4-6, 617-621 p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-35627DOI: 10.1016/j.cplett.2006.08.084Local ID: 28015OAI: diva2:256475
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-30

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Helmersson, Ulf
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