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Thermal detection mechanism of SiC based hydrogen resistive gas sensors
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .ORCID iD: 0000-0002-2817-3574
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 18Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673 K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4 K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 18
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Natural Sciences
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URN: urn:nbn:se:liu:diva-35743DOI: 10.1063/1.2360905Local ID: 28393OAI: oai:DiVA.org:liu-35743DiVA: diva2:256591
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Lloyd-Spets, Anita

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