Thermal detection mechanism of SiC based hydrogen resistive gas sensors
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 89, no 18Article in journal (Refereed) Published
Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673 K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4 K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 89, no 18
IdentifiersURN: urn:nbn:se:liu:diva-35743DOI: 10.1063/1.2360905Local ID: 28393OAI: oai:DiVA.org:liu-35743DiVA: diva2:256591