Crystallographic and morphological characterization of thin pentacene films on polycrystalline copper surfaces
2006 (English)In: Journal of Chemical Physics, ISSN 0021-9606, Vol. 124, no 5, 54711- p.Article in journal (Refereed) Published
The degree of crystallinity, the structure and orientation of crystallites, and the morphology of thin pentacene films grown by vapor deposition in an ultrahigh vacuum environment on polycrystalline copper substrates have been investigated by x-ray diffraction and tapping-mode scanning force microscopy (TM-SFM). Depending on the substrate temperature during deposition, very different results are obtained: While at 77 K a long-range order is missing, the films become crystalline at elevated temperatures. From a high-resolution x-ray-diffraction profile analysis, the volume-weighted size of the crystallites perpendicular to the film surface could be determined. This size of the crystallites increases strongly upon changing temperature between room temperature and 333 K, at which point the size of individual crystallites typically exceeds 100 nm. In this temperature region, three different polymorphs are identified. The vast majority of crystallites have a fiber texture with the (001) net planes parallel to the substrate. In this geometry, the molecules are oriented standing up on the substrate (end-on arrangement). This alignment is remarkably different from that on single-crystalline metal surfaces, indicating that the growth is not epitaxial. Additionally, TM-SFM images show needlelike structures which suggest the presence of at least one additional orientation of crystallites (flat-on or edge-on). These results indicate that properties of thin crystalline pentacene films prepared on technologically relevant polycrystalline metal substrates for fast electronic applications may be compromised by the simultaneous presence of different local molecular aggregation states at all temperatures. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 124, no 5, 54711- p.
IdentifiersURN: urn:nbn:se:liu:diva-36044DOI: 10.1063/1.2150826Local ID: 29557OAI: oai:DiVA.org:liu-36044DiVA: diva2:256892