A novel photoluminescence transition influenced by O implantation in ZnO bulk
2006 (English)In: Chemical Physics Letters, ISSN 0009-2614, E-ISSN 1873-4448, Vol. 421, no 1-3, 309-311 p.Article in journal (Refereed) Published
The bulk zinc oxide (ZnO) sample implanted O with implantation concentration of 5 × 1019/cm3 was investigated by photoluminescence. A novel transition at emission energy of 3.08 eV at 77 K appears in the O-implanted sample. In order to find the origin of the novel transition, the O-implanted effects on the luminescence of ZnO bulk have been studied by first principle calculations based on the local density approximation. The theoretical results show that the novel transition at emission energy of 3.08 eV is attributed to O-antisite (Ozn) produced by O-implanted procedure.
Place, publisher, year, edition, pages
2006. Vol. 421, no 1-3, 309-311 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-36147DOI: 10.1016/j.cplett.2006.01.050Local ID: 30227OAI: oai:DiVA.org:liu-36147DiVA: diva2:256995