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Laser ablation lithography on thermoelectric semconductor
Institute of Surface Chemistry NAS of Ukraine.
Institute of Surface Chemistry NAS of Ukraine.
Institute of Surface Chemistry NAS of Ukraine.
Goteborg University.ORCID iD: 0000-0001-6235-7038
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2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 13, 4759-4762 p.Article in journal (Refereed) Published
Abstract [en]

  In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu2Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns. Surface temperature evolution and transient reflectivity are studied during laser treatment. Creation of Cu islands in the maximal intensity of interference pattern was found.

Place, publisher, year, edition, pages
2006. Vol. 252, no 13, 4759-4762 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-36239DOI: 10.1016/j.apsusc.2005.07.112Local ID: 30689OAI: oai:DiVA.org:liu-36239DiVA: diva2:257087
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Willander, Magnus

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