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Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 23, 233508- p.Article in journal (Refereed) Published
Abstract [en]

4H-SiC p+ - n- - n+ junctions have been prepared on 8° off oriented plane aiming to investigate conditions of Wannier-Stark localization (WSL), and respectively the occurrence of a negative temperature coefficient of avalanche breakdown voltage (TCABV). A method is proposed that can enable obtaining important results without reaching the regime of destructive avalanche breakdown. By analyzing the photocurrent of light with different wavelengths and at strong electric fields, a negative differential photoconductance has been discovered testifying that the WSL is not suppressed at the field inclination in 8° off axis, and a negative TCABV is expected in commercial p-n junctions. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 23, 233508- p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-36442DOI: 10.1063/1.2402207Local ID: 31379OAI: diva2:257290
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-08

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Yakimova, Rositsa
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The Institute of TechnologySemiconductor Materials
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