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Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2006 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 12, no 8-9, 475-482 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Weinheim: WILEY-VCH Verlag GmbH & Co , 2006. Vol. 12, no 8-9, 475-482 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36449Local ID: 31386OAI: oai:DiVA.org:liu-36449DiVA: diva2:257297
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Henry, Anneul-Hassan, JawadBergman, PederHallin, ChristerJanzén, Erik

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