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Identification of the carbon antisite-vacancy pair in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2006 (English)Article in journal (Refereed) Published
Abstract [en]

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart, however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. © 2006 The American Physical Society.

Place, publisher, year, edition, pages
2006. Vol. 96, no 14, 145501- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36459DOI: 10.1103/PhysRevLett.96.145501Local ID: 31401OAI: oai:DiVA.org:liu-36459DiVA: diva2:257307
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2011-01-11

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Nguyen, Son TienJanzén, Erik

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