Identification of the carbon antisite-vacancy pair in 4H-SiC
2006 (English)Article in journal (Refereed) Published
The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart, however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. © 2006 The American Physical Society.
Place, publisher, year, edition, pages
2006. Vol. 96, no 14, 145501- p.
IdentifiersURN: urn:nbn:se:liu:diva-36459DOI: 10.1103/PhysRevLett.96.145501Local ID: 31401OAI: oai:DiVA.org:liu-36459DiVA: diva2:257307