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Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 14, 141909- p.Article in journal (Refereed) Published
Abstract [en]

The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 88, no 14, 141909- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36464DOI: 10.1063/1.2192149Local ID: 31407OAI: oai:DiVA.org:liu-36464DiVA: diva2:257312
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Paskov, PlamenDarakchieva, VanyaMonemar, Bo

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