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High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 5, 051914- p.Article in journal (Refereed) Published
Abstract [en]

Thick GaN bars with [1120] orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the [0001] direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the [1120] direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material possesses a high density of stacking faults and partial dislocations, leading to anisotropic structural characteristics, the (1120)-plane bulk GaN, sliced from boules, exhibits low dislocation density and narrow rocking curves with isotropic in-plane character. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 5, 051914- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-36468DOI: 10.1063/1.2236901Local ID: 31411OAI: oai:DiVA.org:liu-36468DiVA: diva2:257316
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-05-01

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Darakchieva, VanyaMonemar, Bo

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