High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 5, 051914- p.Article in journal (Refereed) Published
Thick GaN bars with  orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the  direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the  direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material possesses a high density of stacking faults and partial dislocations, leading to anisotropic structural characteristics, the (1120)-plane bulk GaN, sliced from boules, exhibits low dislocation density and narrow rocking curves with isotropic in-plane character. © 2006 American Institute of Physics.
Place, publisher, year, edition, pages
2006. Vol. 89, no 5, 051914- p.
IdentifiersURN: urn:nbn:se:liu:diva-36468DOI: 10.1063/1.2236901Local ID: 31411OAI: oai:DiVA.org:liu-36468DiVA: diva2:257316