liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
Show others and affiliations
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 5, 051914- p.Article in journal (Refereed) Published
Abstract [en]

Thick GaN bars with [1120] orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the [0001] direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the [1120] direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material possesses a high density of stacking faults and partial dislocations, leading to anisotropic structural characteristics, the (1120)-plane bulk GaN, sliced from boules, exhibits low dislocation density and narrow rocking curves with isotropic in-plane character. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 89, no 5, 051914- p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-36468DOI: 10.1063/1.2236901Local ID: 31411OAI: diva2:257316
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-05-01

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Darakchieva, VanyaMonemar, Bo
By organisation
The Institute of TechnologySemiconductor Materials
In the same journal
Applied Physics Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 12 hits
ReferencesLink to record
Permanent link

Direct link